Study of Polarization-induced parameters on AlGaN/GaN QW Devices and thermal effect causing current reduction
Abstract
This memo examines the impact of thermal characteristics on epi-layers of quantum well device. The temperature of QW devices does not stay equal along entire vertical layers and hot-spots cause variation in mobility, channel quantization and capacitance. III-N hetero-structures have polarization inherent, which effects temperature dependence of current. For proposed structure the temperature dependence of current is determined for solar, satellite, sensor applications where power conversion losses are more critical. The reported consequence is based on internal lattice temperature which causes poor quantum well device operation. The simulated device does not require any external thermal cooling for operations over medium temperature ranges (275 K to 375 K). The current reduction due to lattice heating is analyzed which agree with reported calculations. The work reports electro-polarization effected results studied for active layer