Comparative analysis of 90nm MOSFET and 18nm FinFET based different Multiplexers for Low Power Digital Circuits

Abstract

This paper illustrates the comparison of MOSFET based multiplexer and FINFET based multiplexer.   Comparative analysis is done of two diverse techniques of 2×1 multiplexer for both MOSFET and FINFET in terms of delay, power and power delay product. Using this analysis user can decide the best multiplexer and technology node according to requirement and application. The techniques that have been analyzed are GDI and PT. In both technology node GDI shows the better performance. GDI based Mux using MOSFET depict the very less minimum power dissipation of 1.72 fW. While GDI Based Mux using FinFET technology is superior in terms of Delay, maximum power dissipation, average power dissipation and power delay product of 2.11ps, 46.69uW, 68.18nW and 0.1438aJ respectively. The multiplexers are designed using MOSFET at 90 nm and using FinFET at 18nm technology node. All the simulated is completed at supply voltage of 1 V and 0.8V respectively.