Analysis Of Optical And Electrical Properties Of Thin Films Ba1-xSrxTiO3 (With x = 0.1 and x = 0.6)
Abstract
Ferroelectric material which is currently being developed is Barium Strontium Titanat (Ba1-xSrxTiO3). Ba1-xSrxTiO3 thin film is a thin layer semiconductor that can be applied as a capacitor. The method used in making Ba0.9Sr0.1TiO3 and Ba0.4Sr0.6TiO3 thin films is the sol-gel method. Annealing process was carried out at 700°C for 1 hour. The manufacturing process of Ba0.9Sr0.1TiO3 and Ba0.4Sr0.6TiO3 materials in the form of capacitors on a glass substrate has been successfully carried out. The structures of Ba0.9Sr0.1TiO3 and Ba0.4Sr0.6TiO3 capacitors are glass/Al/BST/Al. This study aims to analyze the optical properties and electrical properties of BST thin films at different x compositions. Characterization of optical properties obtained by optical energy band gap values which include absorbance, transmittance, refractive index values and layer thickness uses the Tauc plot method. Characterization of electrical properties using impedance spectroscopy obtain capacitance values and dielectric constants. The gap width of Ba0.9Sr0.1TiO3 thin film energy is 3.77 eV, while Ba0.4Sr0.6TiO3 is 3.43 eV, indicating that this material is a semiconductor material. The capacitance and dielectric constant values at the frequency of 1 Hz for Ba0.9Sr0.1TiO3 thin films are 3.1 x 10-8 F and 0.034, while for Ba0.4Sr0.6TiO3 thin films are 4.2x10-8 F and 23.500.
Keywords: BST thin films; Sol-Gel method; Energy band gap; Capacitance; dielectric constant