Photoelectric and spectral characteristics of SI photodetectors

  • Gaibov A.G., Vakhobov K.I.

Abstract

The paper considers the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It was found that ultrasonic irradiation increases the lifetime, diffusion length of carriers and, as a consequence, increases the efficiency of collecting carriers on the electrical contacts of Si-n-p-receivers. As a result of these processes, an increase in the value of the short-circuit current is observed, which causes an increase in the no-load voltage and the efficiency of such a diffusion Si-n-p-structure operating in the photo reformation mode.

Published
2020-06-05
How to Cite
Gaibov A.G., Vakhobov K.I. (2020). Photoelectric and spectral characteristics of SI photodetectors. International Journal of Advanced Science and Technology, 29(11s), 1431 - 1437. Retrieved from https://sersc.org/journals/index.php/IJAST/article/view/21010
Section
Articles