Electronic properties of CoSi2 film in ion bombing by oxygen ions

  • Donaev S.B., Umirzakov B.E., Abduvayitov A.A.

Abstract

The morphology, composition, and electronic properties of the CoSiO film obtained on the CoSi2/Si(111) surface by implantation of O2+ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is ~ 2.4 eV.

Published
2020-06-05
How to Cite
Donaev S.B., Umirzakov B.E., Abduvayitov A.A. (2020). Electronic properties of CoSi2 film in ion bombing by oxygen ions. International Journal of Advanced Science and Technology, 29(11s), 1423 - 1426. Retrieved from https://sersc.org/journals/index.php/IJAST/article/view/21005
Section
Articles