Photosensitivity of Multilayer Structure with Potential Barriers

  • Giyasova Feruza Abdiazizovna, Karimov Abdulaziz Vakhitovich, Yodgorova Dilbara Mustafayevna, Abdulkhaev Oybek Abdullazizovich

Abstract

The paper reports the research results of photosensitivity in Au-vGaAs: O-nCdS-nInP-Au heterojunction structure for various operation modes. Experiments show that irrespective of the excited surface such structures manifest various photosensitivity in the spectral range of 0,85-0,9 μm and 1,31-1,55 μm, which might be due to photon generation processes in high-resistance gallium arsenide and photoemission processes occurring from metal to semiconductor.

Published
2020-06-02
How to Cite
Giyasova Feruza Abdiazizovna, Karimov Abdulaziz Vakhitovich, Yodgorova Dilbara Mustafayevna, Abdulkhaev Oybek Abdullazizovich. (2020). Photosensitivity of Multilayer Structure with Potential Barriers. International Journal of Advanced Science and Technology, 29(9s), 6350 - 6356. Retrieved from https://sersc.org/journals/index.php/IJAST/article/view/20246