Analysis of diamond substrates for CVD synthesis of single-crystal diamonds
The sphere of growing polycrystalline diamond films and high-quality wafers using CVD technology has been actively developing recently. CVD reactors allow growing diamond materials (low in impurities) that can be used in high-power electronics, optics, photonics, and microelectronics. However, the unsolved problem is how to reduce defects in polycrystalline diamond films and wafers. The synthesis of single-crystal CVD diamonds can solve this problem. Single-crystal diamonds are wide-gap semiconductors and have high thermal conductivity, mobility of the main carriers, and transparency in a wide range of wavelengths. Therefore, they have great prospects for use in the manufacture of electronic devices of a new generation. They can serve as the basis for semiconductor films and semiconductor nanostructures for the development of microwave and optoelectronics. The constraining factor in the development of this area is the small size of diamond materials and their high cost. Therefore, studies on the development of a stable synthesis technology of CVD diamonds possessing chemical purity and high structural perfection with satisfactory cost characteristics are important and can give a new impetus to the electronics industry. In this connection, extremely important is control over the single-crystal CVD diamonds received in the course of the synthesis. Extremely important in the synthesis of CVD diamond single crystals is the quality of diamond substrates for their deposition. This paper shows the results of the analysis of diamond substrates for CVD synthesis of single-crystal diamonds for their further use in photonics and microelectronics in the form of high-temperature semiconductors.