1.
Banerjee S, Mukherjee M, Banerjee JP. Bias current optimization of Wurtzite-GaN DDR IMPATT diode for high power operation at THz frequencies . IJAST [Internet]. 2010Apr.30 [cited 2024Jul.18];5:11 -20. Available from: http://sersc.org/journals/index.php/IJAST/article/view/10