DIGITAL LOGIC INTEGRATED CIRCUIT DESIGN USING 4H-SiC MESFETs

Abstract

This paper mainly concentrates on improve and accurate design of digital logic integrated circuits using silicon carbide MESFET transistors, the integrated power devices both analog and digital components all are integrated with same technology. This logic integrated circuits are implemented for high temperature, high power and  intelligent sensor applications. This logic integrated digital circuits are operates at high temperatures compare to silicon. The experimental results are associated with fabricated integrated circuits and 4H-SiC MESFET and resistors. The P+ isolations technology is used to integrated all integrated devices and balanced in particular manner on wafer  surface.