TEMPERATURE INDEPENDENT VOLTAGE REFERENCE IC DESIGN USING SiC N-TYPE MESFET
The large temperature independent control circuits are most commonly used in both analog and digital integrated circuits are implemented and also improved 4H-SiC wide band gap semiconductor materials using high temperature and high frequency transistors. For this application high temperature transistor MESFET improved. Because of particular result the transistor parameters are modified and added necessary required values for operation of high gain voltage amplifier. The result of practical operating temperature gives very good response than reverse operating diodes and also seen both differences of temperature dependent control circuits on Si, the simulated circuit is operated as far as 300˚C.