Low Noise Amplifier for LTE Application Using High-Performance Low Noise Pseudomorphic High Electron Mobility Transistor (PHEMT)

Abstract

A growing communications technology along with modern technology, from time to time. Developments in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in the development of the current transformation. Long Term Evolution (LTE) is a type of wireless communication that available for transmitting the large amounts of data, voice and video over long distance using a different frequency band. Low Noise Amplifier is located at the first block of the receiver system, which makes it one of the important parts to transmit the signal. This project is to design a Low Noise Amplifier for LTE Application that will work at 6 GHz using high-performance low noise Pseudomorphic High Electron Mobility Transistor (PHEMT)  ATF36163 manufactured by Avago Technologies. The overall goal of this research is to study, design and analyze the Low Noise Amplifier at 6 GHz in communication aspects of low noise amplifier must be less than 3 dB and the gain more than 15 dB is based mainly upon the s-parameter of a transistor.