Analysis of Various Technologies in Low Power VLSI Circuits

Abstract

With the growth and advancements in electronics, low power electronic circuits have become one of the key components in electronics. Even though, performance and operation of circuits is the main focus, low power operation has also become the main requirement in most the circuits used. With research and development of technologies in VLSI, it is now possible to produce an electronic device with required performance and low power consumption.Graphene Nano Ribbon Field Effect Transistor (GNRFET), Fin Shaped Field Effect Transistor (FinFET), and Carbon Nano Tube Field Effect Transistor (CNTFET) are the main technologies being discussed in this evaluation. Thegoal of this paper is to provide a detailed explanation about the three technologies with respective circuits. For comparison between the technologies, the area, power, and delay parameters are used. An SRAM design is used for evaluation. This evaluation helps to identify the issues in VLSI technologies, so that they can be improved.