Noise Analysis of Gallium Nitride HEMTs for RF Applications
Abstract
GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention at high frequencies. The optimizing of GaN HEMT technology for low-noise performance has been the current trend of research. Accurate noise characterization and detailed Switching analysis are critical for the practical application in power converters. In this work, GaN HEMT with InGaN/GaN channel and low resistivity SiC substrate with the hybrid drain structure is analysed for noise at high frequencies by TCAD simulations,involving model extraction and delay parameters. Enhanced performance due to reduced transit time and increased transconductance, resulting from the increased electron velocity and reduced drain depletion width is observed. The current and voltage spectral densities are explored at high frequencies. Moreover the device parameters like the conductance, susceptance and resistance are optimized for superior performance and the minimum noise figure is also explored, making the device suitable for RF applications.