VLSI Implementation of Spin Transfer Torque - Magnetic Tunnel Junction - Perpendicular Magnetic Anisotropy (STT-MTJ-PMA) Structure

Abstract

The modern bio-inspired memory computing systems are suitable for implementation of Very Large Scale Integration circuits. They are also economically viable and also technologically feasible. The design of a bio-inspired computing system based on Spintronics is an important research topic in which memory devices play a crucial role. The bio-inspired memory computing systems require high performance circuits with respect to power consumption and throughput. The Magnetic Tunnel Junction (MTJ) is a suitable choice for memory, with an ultra-thin (~1 nm) oxide boundary. The reliability problem impacts on the working of the circuits with these ultrathin dimensions. This research work focuses on issues of reliability in the structure of STT-MTJ-PMA and on compact modelling with quantification techniques. A Sensing-Amplifier (SA) circuit is used in the synthesized Magnetic Tunnel Junction based Complementary Metal Oxide Semiconductor design and in this manuscript we build this circuit. This manuscript presents a compact model for chip designers to consider the reliability issues.