Modeling and Simulation of Vanadium Penta Oxide Based Field Effect Transistors

Abstract

Semiconductor based Metal oxide semiconductor field effect transistor (MOSFET) largely dedicated in Inverter and converter applications. Materials used in existing MOSFET device deliver low efficiency in units of electrical conductivity and concept of energy saving devices. Major drawback in existing system is to design non-volatile electric field control. To improve electrical conductivity and energy saving option vanadium dioxide (VO2) materials is used as voltage regulation device. In proposed work MOFET is prepared with magnesium-phthalocyanine (MgPc) and novel material of vanadium pentoxide (V₂O₅). MOSFET based on vanadium pentoxide improves the characteristics and electrical conductivity parameters. The MOSFET based on V₂O₅ simulated MATLAB environment based on coefficients values of vanadium pentoxide materials holds better conductivity with normal semiconductor based materials and reduce gate voltage for turn on and improves better conductivity.