Al0.08In0.08Ga0.84N/Aln/Si (111) Prepared Via Plasma Assisted Molecular Beam Epitaxy (PA-MBE) Based Hydrogen Gas Sensor

Abstract

n-type Al_0.08In_0.08Ga_0.84N heterostructure based Hydrogen gas sensor has been synthesized and characterized using high resolution X-ray diffractometer (HR-XRD), scanning electron microscope (SEM), energy-dispersive x-ray spectroscopy (EDS) and photoluminescence (PL) spectrum. Phase identification has been characterized using XRD analysis which showed that Al_0.08In_0.08Ga_0.84N epilayer have high-quality with smooth surface morphology. PL results indicated that the film was free from contaminated elements showed a strong emission with a sharp peak located at 364.5 nm. Current-time (I-t) characteristics of Al_0.08In_0.08Ga_0.84N/AlN/Si (111) prepared via plasma assisted molecular beam epitaxy (PA-MBE) gas sensors with 0.1% and 0.2% of H₂ rates at room temperature have been studied and both of them behaved very good gas sensing reproducibility with short response time.