Electronic properties of CoSi2 film in ion bombing by oxygen ions

Abstract

The morphology, composition, and electronic properties of the CoSiO film obtained on the
CoSi2/Si(111) surface by implantation of O2+ ions in combination with annealing were studied. The
parameters of energy bands are determined and information on the density of state of electrons of the
valence band and conduction band is obtained. In particular, it was shown that the band gap of this
film is ~ 2.4 eV.