Design of High Sensitivity Gate All Around Nanowire FET

Abstract

The sensitivity of a Nanowire FET sensor is exhibited by its capacity in discovery of bio-molecules. The key factors that affect the device sensitivity will be addressed. Accordingly, we are doing work to enhance the sensitivity of Silicon Nanowire FET. In the development of sensors with greater sensitivity, the use of high surface to volume ratio was significant. Therefore, the main feature of this paper will focus on the sensitivity improvement of SiNW-FETs sensors.