Simulation Studies of a Thermal Efficient Low Power Non-Silicon MOSFET

Abstract

In power devices the vital parameter to be maintained for optimal performance is temperature. To improve thermal performance Gallium Nitride (GaN) is used as substrate which has about 20% increase in drain current. Device dimensions considered is reduced without affecting performance. Gallium Oxide (Ga₂O₃₎ is considered in the novel FET device used in the paper due to its wideband gap. The characteristic features obtained from the device is effective and useful for low power devices.