Performance Analysis of GaAs-AlGaAs-InGaAs Recessed gate pseudomorphic HEMT on a SiC Substrate

Abstract

The performance enhancement of a pseudomorphic recessed gate HEMT is studied in this paper. A double heterostructure GaAs/AlGaAs/InGaAs pseudomorphic HEMT on a Silicon Carbide substrate is designed and modeled using Silvaco TCAD. The device exhibits better carrier confinement in the InGaAs channel and thereby improved drain current than a conventional HEMT. The DC and AC analysis of the device is carried out. A cut off frequency of 45 GHz and a maximum oscillation frequency of 241 GHz is obtained for the proposed device.