Performance Analysis of GaAs-AlGaAs-InGaAs Recessed gate pseudomorphic HEMT on a SiC Substrate

  • Anju S, Dr. Biji Jacob, Dr. Geenu Paul

Abstract

The performance enhancement of a pseudomorphic recessed gate HEMT is studied in this paper. A double heterostructure GaAs/AlGaAs/InGaAs pseudomorphic HEMT on a Silicon Carbide substrate is designed and modeled using Silvaco TCAD. The device exhibits better carrier confinement in the InGaAs channel and thereby improved drain current than a conventional HEMT. The DC and AC analysis of the device is carried out. A cut off frequency of 45 GHz and a maximum oscillation frequency of 241 GHz is obtained for the proposed device.

Published
2020-06-01
How to Cite
Anju S, Dr. Biji Jacob, Dr. Geenu Paul. (2020). Performance Analysis of GaAs-AlGaAs-InGaAs Recessed gate pseudomorphic HEMT on a SiC Substrate. International Journal of Advanced Science and Technology, 29(10s), 7979-7985. Retrieved from http://sersc.org/journals/index.php/IJAST/article/view/24243
Section
Articles