Photoelectric and spectral characteristics of SI photodetectors

  • Gaibov A.G., Vakhobov K.I.


The paper considers the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It was found that ultrasonic irradiation increases the lifetime, diffusion length of carriers and, as a consequence, increases the efficiency of collecting carriers on the electrical contacts of Si-n-p-receivers. As a result of these processes, an increase in the value of the short-circuit current is observed, which causes an increase in the no-load voltage and the efficiency of such a diffusion Si-n-p-structure operating in the photo reformation mode.

How to Cite
Gaibov A.G., Vakhobov K.I. (2020). Photoelectric and spectral characteristics of SI photodetectors. International Journal of Advanced Science and Technology, 29(11s), 1431 - 1437. Retrieved from