Influence of implantation ions on the electronic structure of GaP(111) surface

Abstract

In this article, the relationship between the band gap E_g and the sizes of nanocrystalline phases is studied. It has been established that in the case of surface sizes of phases d less than 35–40 nm (thickness 3.5–4 nm), quantum-size effects disappear in the Ga0.6Al0.4P nanocrystalline phases. The band gap of the Ga_0.6Al_0.4P nanocrystalline phases, depending on their size, increases from 2.4 eV (at d = 30-35 nm) to 3.1 eV (at d = 10-12 nm).