Behavioral Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Abstract

The circuit behavioral modeling portray the terminal conduct of a circuit as far as
behavioral modeling parameters analysis parameters are concern for behavioral
modeling, and the bearer transport process which happens inside the circuit. These
behavioral modeling along these lines reflect circuit conduct in all areas of activity of the
circuit. It is advantageous to isolate these behavioral modeling into two classifications:
(1) physical circuit behavioral modeling, and (2) identical circuit behavioral modeling.
Physical circuit behavioral modeling depend on a cautious meaning of circuit geometry,
doping profile, transporter transport conditions (semiconductor conditions) and material
attributes. These behavioral modeling can be utilized to foresee both terminal attributes
and transport marvel. Current MOSFET design synthesized circuit IN VLSI circuits,
because of their nano size length needed a few dimensional arrangements of the coupled
semiconductor conditions which can be comprehended distinctly by mathematical
analyzed techniques. The mathematical analyzed circuit test systems give definite
knowledge into the physical part of circuit activity and can foresee the qualities of new
circuits. Hence they are generally used to contemplate circuit material science and circuit
plan