Optimization of Selectivity of Mixed Nitric acid (HF+HNO3) with eight numbers of PRs, Nitride and Oxide layer
Abstract
This paper presents selectivity of Mixed nitric acid with different eight numbers of Photo-resists,
nitride and silicon layer. Photo Resists are used for coating purpose and it enhanced adhesion
property. Wet etching is used here for removing unwanted material. SEZ01 tool is used for etching
and MTOP tool is useful for measurement of Pre-thickness and Post-thickness and by the help of
respective formulae etch rate is calculated. HF+HNO3 mixed with water in 1:6:3 ratios for wet
etching. Medium-1 of SEZ01 is more suitable for this work. This paper computes the selectivity of
different eight different Photo Resists, nitride and oxide layer with respect to poly silicon and shows
which one is suitable for selective wet etching