Design And Simulation Of High Sensitivity RF MEMS Switch

Abstract

This paper proposes the RF MEMS switch for which sensitivity is to be calculated. The proposed switch was tested with different types of materials like Silicon (Si), Gallium Arsenide (GaAs) and Indium Arsenide (InAs). The dimensional optimization has been done for material by considering the material properties. To enhance the sensitivity of the proposed switch, the meanders attached to the switch were changed and tested for Eigen frequency and displacement. The sensitivity of the switch with and without perforations have calculated and compared similarly the sensitivity of the switch have calculated with an increasing number of meanders. The switch is having three meanders showing high sensitivity for a material of GaAs and its value 76.97.