Understanding of Ferroelectric Material for Capacitors and Transistors of Non-volatile Memory

Abstract

Field effect transistors in non-volatile memory use ferroelectric material as a gate insulator. By designing ferroelectric transistors, power dissipation in non-volatile memory can be reduced so they can get devices that can operate with small voltages and produce large currents because by reducing the voltage, the device size can be reduced. Simulation and analysis are very important to achieve this because with simulations and analyzes, time and costs can be reduced and optimal results can be obtained.