Comparative Analysis of 6T, 7T, 8T, 9T with New 7T SRAM Topology for Low Power and High Speed

Abstract

 In this paper, Cadence Virtuoso tool is used to implement different types of SRAM cell topologies. Read power and write power, write static noise margin (WSNM), read static noise margin (RSNM), write delay and read delay of all considered topologies have been measured out. New7T SRAM cell topology is proposed with low read power and write power consumption and it also produces the faster read and write operation. It has been observed that read power of New 7T SRAM cell reduced by 1.56× to 4× as compare to 6T,7T,8T and 9T SRAM cell. It is  write power is reduced by 2.36× to 2.58× smaller as compare to conventional 6T,8T and 9T SRAM cell. It has also observed that New 7T SRAM read delay is 2.37× to 2.57× smaller as compare to 6T,8T and 9T SRAM cell and its write delay is also  reduced by 3.79× to 99× as compared to conventional 6T,7T,8T and 9T  SRAM cell. Write stability of New 7T SRAM is 3.2× to 6.6× larger as compare to 6T,7T,8T and 9T SRAM cell. New 7T SRAM cell has the tradeoff that its read stability is 6× to 14× smaller as compare to 6T,8T and 9T SRAM cell.