Fe doped TiO2 thin films for Solar Cell Applications

Abstract

   Titanium dioxide  and TiO₂:1%Fe thin films thermal evaporation on optical glass and p-type silicon substrates at room temperature under vacuum. Transmittance Over 95% ​​was noticed  in NIR region. the energy gap values were  (3.6- 3.5 eV) for the grown films. XRD data offer that these films were polycrystalline with hexagonal wurtzite structure. From (I-V) characteristics of TiO₂/p-Si it is noticed that short circuit current (I_sc) is 49 mA, open circuit voltage (V_oc) is 45 V, I_max is  37 mA, and V_max is 33 V, the efficiency  (ɳ) have been calculated to be 6%, The high conversion efficiency (η) was 7% for 1% Fe-doped TiO₂/p-Si  device.