Metal-Semiconductor-Metal (MSM) Schottky Diode Characteristice of CuO Doped PbO Thin Films

Abstract

The pure and CuO doped PbO thin films were successfully deposited onto suitably cleaned glass substrate at RT, using thermal evaporation technique. All prepared films were annealed at 523K for 2 h in air. X-ray diffraction (XRD) results suggest that the films were adherent to the substrate and crystallize in polycrystalline according to tetragonal α-PbO with a preferred orientation along (101) reflection. The average crystallite sizes was found to lie in the range of 18.00 – 19.82 nm. Atomic Force Microscope (AFM) images confirms that all films possess a high surface homogeneity in which the distribution of crystalline granules is uniform. The PbO film possesses a transmittance reach the 96% inter Vis - NIR region of spectrum, and decreases with increasing the wt.% of dopants reached 92%, which is advantageous features for opto-electronic devices, especially for solar cell window layers. The optical energy gap for PbO film is 2.87 eV, while it is varies from 2.83 to 2.47 with increasing the wt.%  of CuO.