A FABRICATION OF 4H-SILICON CARBIDE BASEDLATERAL SCR FOR ESD PROTECTION DEVICE

Abstract

This paper demonstrates a silicon carbide-based lateral silicon controlled rectifier (SCR) for use as an electrostatic discharge (ESD) protection device for high current ICs mounted on EVs or self-driving vehicles. The protection devices were designed with three split items and were fabricated with a line width of 0.5 µm. The protection devices were verified in terms of their electrical characteristics by using a transmission line pulse (TLP) system and a curve tracer. The measurements indicate that the devices have a trigger voltage of 165 V and a holding voltage of 40 V. The lateral SCR devices have a breakdown voltage (BV) of 82 V. In addition, the second breakdown current of the demonstrated SCR is above 18 A.